
The method of claim 1, wherein the first optoelectronic component comprises a first optical fiber. A method of joining optoelectronic components such that the optoelectronic components are optically coupled, comprising: positioning first and second optoelectronic components in adjacent relationship such that light signals can pass therebetween applying a curable resin having adhesive properties to an interface of the first and second optoelectronic components passing light signals between the first and second optoelectronic components aligning the first and second optoelectronic components relative to each other, comprising: detecting signal strength of the light signals passing between the first and second optoelectronic components and moving the first and second optoelectronic components relative to each other until signal strength of the light signals passing between the first and second optoelectronic components is detected as being substantially maximized irradiating the interface with electromagnetic radiation to rapidly cure the resin in response to detecting that signal strength of the light signals passing between the first and second optoelectronic components is substantially maximized such that the aligned first and second optoelectronic components are fixedly joined and heating portions of the first and/or second optoelectronic components substantially simultaneously with irradiating the interface with electromagnetic radiation to facilitate curing of the resin. The joined components are then transferred to a curing oven to fully cure the adhesive resin. A post-cure method of joining an optical fiber to an optoelectronic component includes positioning an optical fiber and optoelectronic component in adjacent relationship such that light signals can pass therebetween, applying a curable resin having adhesive properties to an interface of the optical fiber and the optoelectronic component, aligning the optical fiber and optoelectronic component relative to each other such that the signal strength of light signals passing between the optical fiber and the optoelectronic component is substantially maximized, and irradiating the interface with microwave energy to partially cure the resin. An in situ method of joining an optical fiber to an optoelectronic component includes positioning an optical fiber and optoelectronic component in adjacent relationship such that light signals can pass therebetween, applying a curable resin having adhesive properties to an interface of the optical fiber and the optoelectronic component, aligning the optical fiber and optoelectronic component relative to each other such that signal strength of light signals passing between the optical fiber and the optoelectronic component is substantially maximized, and irradiating the interface with non-ionizing radiation in RF/microwave energy to rapidly cure the resin. In-situ and post-cure methods of joining optical fibers and optoelectronic components are provided. The apparatus may be adapted to various operations in semiconductor device fabrication and testing. introducing microwave power into the applicator cavity in order to heat the wafer, with the metallic ring serving to modify the power distribution near the wafer edge. supporting the wafer on a fixture, the fixture comprising a dielectric supporting member in contact with the wafer and a metallic ring member disposed generally parallel to and concentric with the wafer at a selected distance from the wafer and, c. placing the wafer in a microwave applicator cavity b. An associated method for heating a semiconductor wafer comprises the steps of: a. The fixture comprises a dielectric member providing mechanical support for the wafer and a metallic ring disposed generally parallel to and concentric with the wafer at a selected distance from the wafer, whereby the application of microwave power to the wafer may be adjusted to compensate for edge effects. (718) 238-3541, (718) 680-3512, (347) 492-0485ģ704 Graceland Ct, Mount Juliet, TN 37122ħ3 Furness Pl APT A3, Staten Island, NY 10314ġ2468 Silver Bay Cir, Indianapolis, IN 46236Ĥ619 Tamarisk Dr, Oklahoma City, OK 73142ġ3649 Clarendon Springs Ct, Centreville, VA 20121ĥ02 Regents Crosse Ln, Richmond, VA 23238Ģ802 Cumberland Dr, Missouri City, TX 77459ġ3057 Lee Jackson Memrl C, Fairfax, VA 22033ġ5031 Sugar Place Dr, Sugar Land, TX 77498Īn apparatus for heating a semiconductor wafer includes the following: a microwave source an applicator cavity and, a fixture for supporting a wafer in the applicator cavity. 1940 Gableridge Turn APT 40, Woodbridge, VA 22191
